Download PDF by Debaprasad Das: Carbon nanotube and graphene nanoribbon interconnects

By Debaprasad Das

ISBN-10: 1482239507

ISBN-13: 9781482239508

An substitute to Copper-Based Interconnect Technology

With a rise famous for extra circuit parts on a unmarried chip, there's a starting to be want for nanoelectronic units and their interconnects (a actual connecting medium made from skinny steel motion pictures among numerous electric nodes in a semiconducting chip that transmit signs from one aspect to a different with none distortion). Carbon Nanotube and Graphene Nanoribbon Interconnects explores new vital carbon nanomaterials, carbon nanotube (CNT) and graphene nanoribbon (GNR), and compares them with that of copper-based interconnects. those nanomaterials convey virtually 1,000 instances extra current-carrying means and considerably better suggest loose direction than copper. as a result of their impressive houses, CNT and GNR may well quickly change conventional copper interconnects. devoted to proving their advantages, this publication covers the fundamental thought of CNT and GNR, and gives a finished research of the CNT- and GNR-based VLSI interconnects at nanometric dimensions.

Explore the aptitude functions of CNT and Graphene for VLSI Circuits

The ebook begins with a short creation of carbon nanomaterials, discusses the newest examine, and info the modeling and research of CNT and GNR interconnects. It additionally describes undefined, thermal, and mechanical homes, and structural habit of those fabrics. furthermore, it chronicles the development of those primary houses, explores attainable engineering functions and progress applied sciences, and considers purposes for CNT and GNR except their use in VLSI circuits.

Comprising 8 chapters this text:

  • Covers the fundamentals of carbon nanotube and graphene nanoribbon
  • Discusses the expansion and characterization of carbon nanotube and graphene nanoribbon
  • Presents the modeling of CNT and GNR as destiny VLSI interconnects
  • Examines the applicability of CNT and GNR when it comes to numerous research works
  • Addresses the timing and frequency reaction of the CNT and GNR interconnects
  • Explores the sign integrity research for CNT and GNR interconnects
  • Models and analyzes the applicability of CNT and GNR as strength interconnects
  • Considers the destiny scope of CNT and GNR

Beneficial to VLSI designers operating during this quarter, Carbon Nanotube and Graphene Nanoribbon Interconnects offers an entire knowing of carbon-based fabrics and interconnect expertise, and equips the reader with adequate wisdom in regards to the destiny scope of study and improvement for this rising topic.

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Additional resources for Carbon nanotube and graphene nanoribbon interconnects

Example text

5d and 1d correspond to metallic fractions of 2/3 and 1/2, respectively. ) Distribution of CNTs in a bundle of width 16 nm and thickness 32 nm. The interconnect dimensions are as per 16-nm technology node. The bundle is assumed to be densely packed, that is, with zero spacing. ) CNT distribution in a bundle with different CNT diameter and spacing. 7d). Bundle width, w = 16 nm, and thickness, t = 32 nm. 8 nm (32-nm Technology Node) Dia. 7d Mean Dia. 3 153 71 28 95 30 7 57 11 1 26 2 0 223 133 67 170 80 27 133 48 10 96 22 2 253 193 127 207 145 74 177 113 43 148 82 19 223 219 184 170 176 133 133 150 101 96 126 71 153 193 209 95 145 161 57 113 134 26 82 110 82 133 184 35 80 133 14 48 101 3 22 71 34 71 127 9 30 74 1 11 43 0 2 19 1121 1013 926 781 686 609 572 494 433 395 338 292 Note: Spacing between CNTs is expressed as percentage of CNT diameter.

5d and 1d correspond to metallic fractions of 2/3 and 1/2, respectively. ) Distribution of CNTs in a bundle of width 16 nm and thickness 32 nm. The interconnect dimensions are as per 16-nm technology node. The bundle is assumed to be densely packed, that is, with zero spacing. ) CNT distribution in a bundle with different CNT diameter and spacing. 7d). Bundle width, w = 16 nm, and thickness, t = 32 nm. 8 nm (32-nm Technology Node) Dia. 7d Mean Dia. 3 153 71 28 95 30 7 57 11 1 26 2 0 223 133 67 170 80 27 133 48 10 96 22 2 253 193 127 207 145 74 177 113 43 148 82 19 223 219 184 170 176 133 133 150 101 96 126 71 153 193 209 95 145 161 57 113 134 26 82 110 82 133 184 35 80 133 14 48 101 3 22 71 34 71 127 9 30 74 1 11 43 0 2 19 1121 1013 926 781 686 609 572 494 433 395 338 292 Note: Spacing between CNTs is expressed as percentage of CNT diameter.

It is shown that the CNTFET-based SRAM cell tolerates the process, power supply voltage, and temperature variations significantly better than its CMOS counterpart. Zhang et al. [83] presented a design technique to overcome two major sources of CNTFET imperfections: metallic CNTs and CNT density variations. 5 Practical Circuits Close et al. [84] reported the fabrication of the first stand-alone integrated circuit combining silicon transistors and individual CNT interconnect wires on the same chip.

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Carbon nanotube and graphene nanoribbon interconnects by Debaprasad Das


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